| PART |
Description |
Maker |
| PHB101NQ04T PHP101NQ04T |
N-channel Trenchmos (tm) standard level FET
N-channel TrenchMOS standard level FET 75 A, 40 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS standard level FET
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK7520-55A BUK7620-55A |
TrenchMOS(tm) standard level FET
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
TrenchMOS TM standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BUK6226-75C BUK6226-75C-15 |
N-channel TrenchMOS FET
N-channel TrenchMOS FET Rev. 01 ?4 October 2010
|
NXP Semiconductors N.V.
|
| PHP11N06LT PHB11N06LT PHD11N06LT PHB11N06LT118 |
10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, D2PAK-3
N-channel TrenchMOS TM transistor Logic level FET
N-channel TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHP34NQ11T |
N-channel Trenchmos (tm) standard level FET
From old datasheet system
N-channel TrenchMOS⑩ standard level FET
N-channel TrenchMOS standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHP45NQ15T PHB45NQ15T |
PHP45NQ15T; PHB45NQ15T; N-channel TrenchMOS(tm) standard level FET
N-channel TrenchMOS standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| SI4884 SI4884-02 |
TrenchMOS(tm) logic level FET
From old datasheet system
TrenchMOS? logic level FET
TrenchMOS⑩ logic level FET
TrenchMOS logic level FET
TrenchMOSlogic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHB55N03LT PHD55N03LT PHP55N03LT PHB55N03 |
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel TrenchMOS transistor Logic level FET(N沟道TrenchMOS 晶体管逻辑电平场效应管) 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| 2N7002KA |
N-channel TrenchMOS FET
|
NXP Semiconductors
|
| BUK662R4-40C |
N-channel TrenchMOS FET
|
NXP Semiconductors
|
